PART |
Description |
Maker |
15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
KSC815 KSC815YTA_NL KSC815COBU KSC815CYBU KSC815CY |
NPN Epitaxial Silicon Transistor Low Frequency Amplifier & High Frequency Oscillator
|
FAIRCHILD[Fairchild Semiconductor]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
KSC2785 KSC2785GBU KSC2785GTA KSC2785LTA KSC2785OB |
Audio Frequency Amplifier & High Frequency OSC. Audio Frequency Amplifier High NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
FC21 |
TR: NPN Epitaxial Planar Silicon Transistor FET: N-Channel Silicon Junction FET High-Frequency Amplifier, AM tuner RF Amplifier Applications High-Frequency Amplifier/ AM tuner RF Amplifier Applications
|
Sanyo Semicon Device Sanyo Electric Co.,Ltd.
|
FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
KSC1623GMTF KSC1623YMTF KSC1623 KSC1623Y KSC1623G |
NPN Epitaxial Silicon Transistor Low Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
|
2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) From old datasheet system
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
EC3H04C 1224 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications From old datasheet system High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
|
Sanyo Semicon Device Sanyo Electric Co., Ltd.
|
UPA812T-T1-A UPA812T |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|